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as well as specific models for each
and are discriminated from other features of similar height by their spatial wavelength range
This process emphasizes quality
The specimen cross-sectional area shall be constant to within ±1% of the average area as determined by measurements along the crystal axis (refer to ¶ 12
MF052500 - SEMI MF525 - Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe Revision:SEMI MF525-0312 - Superseded as well as specific modelsThis Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type. Resistivity of the epitaxial films can be evaluated without the necessity of thin film correction factors provided that the ratio of layer thickness to effective probe contact radius is greater than 20. This